- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 488
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
3,752
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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Infineon Technologies |
1,189
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
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Maxim Integrated |
392
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
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IXYS Integrated Circuits Division |
1,015
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 3A SOIC
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，3V | ||
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Texas Instruments |
3,661
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | ||
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Texas Instruments |
3,329
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8-SOIC
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Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Texas Instruments |
2,762
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Tube | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Maxim Integrated |
253
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
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Texas Instruments |
3,996
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL NON-INV PWR DRVR 16-SOIC
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
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Texas Instruments |
160
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL NON-INV PWR DRVR 16-SOIC
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Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
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Texas Instruments |
1,358
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HI/LO SIDE 3A 8SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | ||
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Texas Instruments |
225
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HIGH/LOW SIDE 3A 8SOIC
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Bulk | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Texas Instruments |
121
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
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Bulk | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
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Maxim Integrated |
180
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR FET P-P 14-TSSOP
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Texas Instruments |
5,743
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8SOPWRPAD
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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Texas Instruments |
3,780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Bulk | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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Maxim Integrated |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC DRVR FET P-P 8-UMAX
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | ||
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ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | ||
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|
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ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - |
