- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Conditions sélectionnées:
Découvrez les produits 22
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | 0.8V,2V | ||||
Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | 0.8V,2V | ||||
Maxim Integrated |
27
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | - | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | - | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | 0.8V,2V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | 0.8V,2V | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns,40ns | - | ||||
Microchip Technology |
2,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
2,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Strip | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
954
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Low-Side | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Low-Side | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V |