- Packaging：
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- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 90
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | |
|
|
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
1,591
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | ||
|
|
|
ON Semiconductor |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | 0.8V，2V |
