- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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Découvrez les produits 24
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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|
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Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
27
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | - | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | - | ||
|
|
Microchip Technology |
2,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,179
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INVERT 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
2,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Strip | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
954
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V |
