- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 488
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Microchip Technology |
1,179
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INVERT 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DFN-S
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
Microchip Technology |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
3.0A MATCHED，HIGH -SPEED，LOW-S
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting，Non-Inverting | Independent | High-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
3,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V |
