- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 488
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 190 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 430ns，260ns | 2.3V，- | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 36 MPQ: 1
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IC DRIVER QUAD HI SIDE 20-DIP
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Tube | - | 7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR FET P-P 8-UMAX
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRVR FET P-P 8-UMAX
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER FET P-P 8-UMAX
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET P-P 8-UMAX
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER FET P-P 8-UMAX
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRVR FET P-P 14-TSSOP
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER FET P-P 14-TSSOP
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-TSSOP-EP | Surface Mount | RC Input Circuit | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | - | ||
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ON Semiconductor |
50,000
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3 jours |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
52,157
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
52,157
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
12,500
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3 jours |
-
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MOQ: 2500 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
14,435
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
14,435
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
7,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 2A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
11,940
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOSIDE DUAL 2A 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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ON Semiconductor |
11,940
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOSIDE DUAL 2A 8SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | |||
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Microchip Technology |
2,236
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL NONINV 8SOIC
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Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | |||
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Microchip Technology |
1,029
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V |
