- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,741
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF DUAL SYNC 14SOIC
|
Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 36V | 26ns,18ns | 1.25A,2A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Tape & Reel (TR) | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Linear Technology/Analog Devices |
1,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Cut Tape (CT) | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Linear Technology/Analog Devices |
1,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
- | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Tape & Reel (TR) | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Linear Technology/Analog Devices |
2,429
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Cut Tape (CT) | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Linear Technology/Analog Devices |
2,429
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
- | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | ||||
Renesas Electronics America Inc. |
670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF DUAL SYNC 16QFN
|
Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 36V | 26ns,18ns | 1.25A,2A | ||||
Power Integrations |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IGBT FET GATE DVR 8A 1700V ESOP
|
Tape & Reel (TR) | - | - | - | 16-PowerSOIC (0.350",8.89mm Width),15 Leads | eSOP-R16B | Surface Mount | - | - | - | - | - | - | - | - | ||||
Power Integrations |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT FET GATE DVR 8A 1700V ESOP
|
Cut Tape (CT) | - | - | - | 16-PowerSOIC (0.350",8.89mm Width),15 Leads | eSOP-R16B | Surface Mount | - | - | - | - | - | - | - | - | ||||
Power Integrations |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT FET GATE DVR 8A 1700V ESOP
|
- | - | - | - | 16-PowerSOIC (0.350",8.89mm Width),15 Leads | eSOP-R16B | Surface Mount | - | - | - | - | - | - | - | - | ||||
Powerex Inc. |
6,224
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER INV/AC SERVO
|
Bulk | - | 14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module,12 Leads | Module | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 400ns,300ns | 5A,5A | ||||
Powerex Inc. |
541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR ISO 5A
|
Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 70°C (TA) | 44-DIP Module,28 Leads | Module | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | - | 400ns,300ns | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 3A,4A | ||||
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 3A,4A | ||||
Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
- | - | 4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 3A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDG SELF OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns,50ns | 180mA,260mA |