Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 120
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX5048AATT+T
Maxim Integrated
1,500
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 6-TDFN
Strip - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
MAX15012DASA+
Maxim Integrated
171
3 jours
-
MOQ: 1  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 2A,2A
MAX5064AATC+
Maxim Integrated
163
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 12-TQFN
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 12-WQFN Exposed Pad 12-TQFN (4x4) Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 2A,2A
MAX5062BASA+
Maxim Integrated
187
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 2A,2A
LM5114AMF/NOPB
Texas Instruments
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114AMF/NOPB
Texas Instruments
2,952
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Cut Tape (CT) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114AMF/NOPB
Texas Instruments
2,952
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
- - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5134ASD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 7.6A LOW SIDE 6WQFN
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Single Low-Side 1 N-Channel MOSFET - 3ns,2ns 4.5A,7.6A
LM5114ASD/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 7.6A LOW SIDE 6WQFN
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114ASD/NOPB
Texas Instruments
1,307
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 7.6A LOW SIDE 6WQFN
Cut Tape (CT) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114ASD/NOPB
Texas Instruments
1,307
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 7.6A LOW SIDE 6WQFN
- - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5134AMF/NOPB
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 7.6A LO SIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 3ns,2ns 4.5A,7.6A
LM5114AMF/S7003109
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 7.6A LOSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114AMF/S7003109
Texas Instruments
1,235
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 7.6A LOSIDE SOT23-6
Cut Tape (CT) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114AMF/S7003109
Texas Instruments
1,235
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 7.6A LOSIDE SOT23-6
- - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
1EDN7512GXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 4000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Tape & Reel (TR) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad PG-WSON-6-1 Surface Mount Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
Cut Tape (CT) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad PG-WSON-6-1 Surface Mount Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns 4A,8A
1EDN7512GXTMA1
Infineon Technologies
2,948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSOP
- EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad PG-WSON-6-1 Surface Mount Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns 4A,8A
UCC27527DSDT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad 8-SON (3x3) Surface Mount Independent Low-Side 2 IGBT,N-Channel MOSFET - 7ns,6ns 5A,5A
UCC27527DSDT
Texas Instruments
500
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad 8-SON (3x3) Surface Mount Independent Low-Side 2 IGBT,N-Channel MOSFET - 7ns,6ns 5A,5A