- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 120
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
1,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Strip | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns,65ns | 2A,2A | ||||
Maxim Integrated |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 12-TQFN
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 12-WQFN Exposed Pad | 12-TQFN (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 2A,2A | ||||
Maxim Integrated |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 2A,2A | ||||
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 4.5A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,307
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,307
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 4.5A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns,4.5ns | 4A,8A | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 5A,5A | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 5A,5A |