- Packaging：
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- Series：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOSIDE DUAL 4A 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOSIDE DUAL 4A 8SOIC
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- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | ||
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ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR DUAL NONINV 4A 8MLP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
- | - | 4.5 V ~ 18 V | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A | |||
|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-WDFN Exposed Pad | 8-MLP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 5A，5A |
