- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 263
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
23,086
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
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Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
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Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
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Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
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|
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Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
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Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns，21ns | 2.5A，6A | ||
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|
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Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 4A，4A | ||
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Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
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ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC GATE DVR SGL 9A HS 8-SOIC
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- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 10.6A，11.4A | ||
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | 1A，1A | ||
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Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | 2A，2A | ||
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|
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Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | 2A，2A | ||
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|
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Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
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Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
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μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA | ||
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Texas Instruments |
11,736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 4A，4A | ||
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Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | ||
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ROHM Semiconductor |
19,096
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET CTLR LOAD SW 5-HVSOF
|
- | 2.7 V ~ 5.5 V | -25°C ~ 85°C (TA) | SOT-665 | HVSOF5 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 130μs，18μs | - | ||
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|
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Texas Instruments |
24,234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
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Infineon Technologies |
6,903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-SOIC
|
- | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | 180mA，260mA | ||
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|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 5A，5A | ||
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|
|
Infineon Technologies |
4,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE SELF OSC 8SOIC
|
- | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | 180mA，260mA |
