Package / Case:
Number of Drivers:
Rise / Fall Time (Typ):
Découvrez les produits 1,741
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
ZXGD3006E6TA
Diodes Incorporated
21,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3006E6TA
Diodes Incorporated
23,086
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- Automotive,AEC-Q101 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3003E6TA
Diodes Incorporated
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3006E6QTA
Diodes Incorporated
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3006E6QTA
Diodes Incorporated
7,375
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount Non-Inverting Single Low-Side 1 IGBT,SiC MOSFET - 48ns,35ns 10A,10A
ZXGD3004E6TA
Diodes Incorporated
33,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) -55°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3103N8TC
Diodes Incorporated
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns 2.5A,6A
UCC27518DBVR
Texas Instruments
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27518DBVR
Texas Instruments
4,831
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
UCC27518DBVR
Texas Instruments
4,831
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 4A,4A
TPS28225DRBR
Texas Instruments
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Tape & Reel (TR) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 10ns,10ns 2A,2A
TPS28225DRBR
Texas Instruments
9,372
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Cut Tape (CT) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad 8-SON (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 10ns,10ns 2A,2A