Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 323
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IR2104
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2127
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2136
Infineon Technologies
Enquête
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MOQ: 104  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR2101S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2102
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2102S
Infineon Technologies
Enquête
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MOQ: 190  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2103
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2103S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2104STR
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2122
Infineon Technologies
Enquête
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MOQ: 150  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube 13 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 250ns,250ns 130mA,130mA
98-0066
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8SOIC
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2127STR
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8SOIC
Tape & Reel (TR) 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2128
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR2128S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8SOIC
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 250mA,500mA
IR21362
Infineon Technologies
Enquête
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MOQ: 104  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21362J
Infineon Technologies
Enquête
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MOQ: 117  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21362S
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR2136J
Infineon Technologies
Enquête
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MOQ: 108  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR2136S
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21014
Infineon Technologies
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA