- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 130
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
14,090
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
6,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
6,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
12,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
12,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
23,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
7,173
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
5,639
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
|
|
|
Infineon Technologies |
1,860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR CURR SENSE 8SOIC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,712
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
5,712
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
IXYS Integrated Circuits Division |
4,958
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DUAL LOW SIDE MOSFET DRIVER
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A |
