- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 111
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Cut Tape (CT) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
Infineon Technologies |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
23,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
Infineon Technologies |
1,860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR CURR SENSE 8SOIC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 14A，14A | ||
|
|
|
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 14A，14A | ||
|
|
|
IXYS Integrated Circuits Division |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,958
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8-DIP
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,942
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 600V 200/420MA 8-DIP
|
Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A |
