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- Voltage - Supply：
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- Supplier Device Package：
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- Mounting Type：
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- Conditions sélectionnées:
Découvrez les produits 9
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC HIGH SIDE DRIVER 8DIP
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC HIGH SIDE DRIVER 8SOIC
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET/IGBT DVR 600V 8-SOIC
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Tape & Reel (TR) | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 150 MPQ: 1
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IC MOSFET DRIVER HIGH-SIDE 8-DIP
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Tube | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | IGBT，N-Channel MOSFET | 600V | 250ns，250ns | 130mA，130mA | ||
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Microchip Technology |
Enquête
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-
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MOQ: 5000 MPQ: 1
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IC MOSFET DVR HIGH-SIDE 4TQFN
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Tape & Reel (TR) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | N-Channel MOSFET | - | - | - | |||
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Microchip Technology |
5,102
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HIGH-SIDE 4TQFN
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Cut Tape (CT) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | N-Channel MOSFET | - | - | - | |||
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Microchip Technology |
5,102
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HIGH-SIDE 4TQFN
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- | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | N-Channel MOSFET | - | - | - | |||
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Microchip Technology |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR HIGH-SIDE 4TDFN
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Tape & Reel (TR) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UQFN | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | N-Channel MOSFET | - | - | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HIGH-SIDE 4TQFN
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Cut Tape (CT) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | N-Channel MOSFET | - | - | - |
