Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 323
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IXDN609YI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV TO263-5
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,15ns 9A,9A
IR2102PBF
Infineon Technologies
Enquête
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MOQ: 18000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IXDD614SITR
IXYS Integrated Circuits Division
Enquête
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MOQ: 2000  MPQ: 1
14A 8SOIC EXP MTL NON INV W/ENAB
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDI614SITR
IXYS Integrated Circuits Division
Enquête
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MOQ: 2000  MPQ: 1
14A 8LEAD SOIC EXP MTL INVERTING
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDN614SITR
IXYS Integrated Circuits Division
Enquête
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MOQ: 2000  MPQ: 1
14A 8SOIC EXP MTL NON INVERTING
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDD614SI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 8SOIC EXP MTL NON INV W/ENAB
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDI614SI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 8LEAD SOIC EXP MTL INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDN614SI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 8SOIC EXP MTL NON INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDI614CI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 5 PIN TO-220 INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 Formed Leads TO-220-5 Through Hole Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDN614CI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 5PIN TO-220 NON INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-220-5 Formed Leads TO-220-5 Through Hole Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IXDN614YI
IXYS Integrated Circuits Division
Enquête
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MOQ: 1000  MPQ: 1
14A 5LEAD TO-263 NON INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263-5 Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 25ns,18ns 14A,14A
IR2136JPBF
Infineon Technologies
Enquête
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MOQ: 1134  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR2136JTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC DRIVER BRIDGE 3PHASE 44PLCC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21363SPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DRIVER 3PHASE 600V 28SOIC
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21365SPBF
Infineon Technologies
Enquête
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MOQ: 2000  MPQ: 1
IC DRIVER 3PHASE 600V 28SOIC
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21365STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DVR 3PHASE SOFT TURN 28-SOIC
Tape & Reel (TR) 12 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21363JPBF
Infineon Technologies
Enquête
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MOQ: 1134  MPQ: 1
IC DRIVER 3-PHASE 44-PLCC
Tube 12 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR21363JTRPBF
Infineon Technologies
Enquête
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MOQ: 500  MPQ: 1
IC DRIVER 3PHASE 44-PLCC
Tape & Reel (TR) 12 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 200mA,350mA
IR2104S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA
IR2101
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 210mA,360mA