- Voltage - Supply:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- High Side Voltage - Max (Bootstrap):
-
- Rise / Fall Time (Typ):
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 323
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV TO263-5
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 9A,9A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 210mA,360mA | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8SOIC EXP MTL NON INV W/ENAB
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8LEAD SOIC EXP MTL INVERTING
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8SOIC EXP MTL NON INVERTING
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8SOIC EXP MTL NON INV W/ENAB
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8LEAD SOIC EXP MTL INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8SOIC EXP MTL NON INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 5 PIN TO-220 INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 Formed Leads | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 5PIN TO-220 NON INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 Formed Leads | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 5LEAD TO-263 NON INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 14A,14A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1134 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER 3PHASE 600V 28SOIC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER 3PHASE 600V 28SOIC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3PHASE SOFT TURN 28-SOIC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1134 MPQ: 1
|
IC DRIVER 3-PHASE 44-PLCC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER 3PHASE 44-PLCC
|
Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 210mA,360mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 210mA,360mA |