- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 323
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8SOIC EXP MTL DUAL IN/NON-INV
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8 SOIC EXP METAL DUAL INVERT
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8SOIC EXP MTL DUAL NON INVERT
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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2A 8SOIC EXP MTL DUAL IN/NON-INV
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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2A 8 SOIC EXP METAL DUAL INVERT
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC HIGH SIDE DRIVER 8DIP
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC HIGH SIDE DRIVER 8SOIC
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC MOSFET/IGBT DVR 600V 8-SOIC
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Tape & Reel (TR) | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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14A 8 PIN DIP INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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14A 8 PIN DIP NON INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 18000 MPQ: 1
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IC MOSFET DRVR CURR SENSE 8DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8SOIC
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Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV TO263-5
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A |
