- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 323
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER 3PHASE 28-SOIC
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Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
921
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 3PHASE 28-SOIC
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Cut Tape (CT) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
921
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 3PHASE 28-SOIC
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- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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IXYS Integrated Circuits Division |
991
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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Infineon Technologies |
997
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
754
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 1CHAN HV 600V 8SOIC
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
784
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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IXYS Integrated Circuits Division |
715
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
262
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 3A SOIC
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 3A，3A | ||
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Infineon Technologies |
961
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LOW SIDE 8-SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3800 MPQ: 1
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IC HALF BRIDGE DRIVER 8SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A MOSFET 8 DFN DUAL INV/NON-INV
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A 8 SOIC DUAL INV/NON-INVERTING
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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2A 8 DFN DUAL INVERTING
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 SOIC DUAL INVERTING
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
2A 8 LEAD SOIC DUAL NON INVERTIN
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A |
