- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 323
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,404
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
233
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
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Tape & Reel (TR) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
2,785
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER CURR SENSE 1CHAN 8SOIC
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Cut Tape (CT) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
2,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
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- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
1,015
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 3A SOIC
|
Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 3A，3A | ||
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Infineon Technologies |
2,958
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
2,942
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
631
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
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|
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IXYS Integrated Circuits Division |
9,707
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
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Cut Tape (CT) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
9,707
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 9A，9A | ||
|
|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
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|
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Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
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Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 210mA，360mA | ||
|
|
|
Infineon Technologies |
293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER CUR SENSE 8SOIC
|
Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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|
|
IXYS Integrated Circuits Division |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
14A 5 LEAD TO-263 INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 14A，14A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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|
|
Infineon Technologies |
1,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA |
