- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 323
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-SOIC
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
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IC GATE DRIVER DUAL 2A 8-SOIC
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-SOIC
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-SOIC
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Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
|
IC MOSFET DRVR DUAL 2A 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 2A，2A | ||
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|
|
IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
|
IC GATE DRIVER DUAL 2A 8-SOIC
|
Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-DIP
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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|
|
IXYS |
Enquête
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- |
-
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MOQ: 94 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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|
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IXYS |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 4A，4A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 108 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 44-PLCC
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Tube | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 104 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC DVR 3PHASE SOFT TURN 44-PLCC
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Tape & Reel (TR) | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 200mA，350mA | ||
|
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Microchip Technology |
2,000
|
3 jours |
-
|
MOQ: 500 MPQ: 1
|
IC DVR MOSFET LOW SIDE 4TQFN
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 4-UQFN | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 12ns，12ns | 1.5A，1.5A | |||
|
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Microchip Technology |
2,410
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR MOSFET LOW SIDE 4TQFN
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 4-UQFN | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 12ns，12ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET LOW SIDE 4TQFN
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 4-UQFN | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 12ns，12ns | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC MOSFET DVR HIGH-SIDE 4TQFN
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Tape & Reel (TR) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | |||
|
|
Microchip Technology |
5,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH-SIDE 4TQFN
|
Cut Tape (CT) | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - |
