- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 103
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 1.4A，2.2A | |||
|
|
ON Semiconductor |
1,605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 1.4A，2.2A | |||
|
|
ON Semiconductor |
1,605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 1.4A，2.2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 1.4A，2.2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA |
