- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 11
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
1,925
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
-40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
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|
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Infineon Technologies |
2,795
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
-40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3800 MPQ: 1
|
IC MOSFET IGBT 20V
|
-40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | IGBT，N-Channel MOSFET | 700V | 200ns，100ns | 60mA，130mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
-40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
-40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
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ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
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-40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | N-Channel MOSFET | 600V | 40ns，20ns | 1.4A，2.2A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
-40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
-40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-DIP
|
-40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
-40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA | |||
|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
-40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 250mA，500mA |
