Découvrez les produits 42
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IR2304SPBF
Infineon Technologies
1,925
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR2304STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR2304STRPBF
Infineon Technologies
3,257
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR2304STRPBF
Infineon Technologies
3,257
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR7304STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 700V 200ns,100ns 60mA,130mA
IR7304STRPBF
Infineon Technologies
2,261
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 700V 200ns,100ns 60mA,130mA
IR7304STRPBF
Infineon Technologies
2,261
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 700V 200ns,100ns 60mA,130mA
2EDN7424FXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER DSO8
Tape & Reel (TR) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-DSO-8-60 Independent Low-Side N-Channel MOSFET - 6.4ns,5.4ns 4A,4A
2EDN7424FXTMA1
Infineon Technologies
2,150
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER DSO8
Cut Tape (CT) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-DSO-8-60 Independent Low-Side N-Channel MOSFET - 6.4ns,5.4ns 4A,4A
2EDN7424FXTMA1
Infineon Technologies
2,150
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER DSO8
- EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-DSO-8-60 Independent Low-Side N-Channel MOSFET - 6.4ns,5.4ns 4A,4A
IR25601STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR25601STRPBF
Infineon Technologies
35
3 jours
-
MOQ: 1  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR25601STRPBF
Infineon Technologies
35
3 jours
-
MOQ: 1  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
IR7304SPBF
Infineon Technologies
Enquête
-
-
MOQ: 3800  MPQ: 1
IC MOSFET IGBT 20V
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 700V 200ns,100ns 60mA,130mA
IR25601SPBF
Infineon Technologies
Enquête
-
-
MOQ: 3800  MPQ: 1
IC HALF BRIDGE DRIVER 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 200ns,100ns 60mA,130mA
NCP5104DR2G
ON Semiconductor
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA
NCP5104DR2G
ON Semiconductor
11,797
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA
NCP5104DR2G
ON Semiconductor
11,797
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
- - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA
NCP5106BDR2G
ON Semiconductor
37,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO 600V 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA
NCP5106BDR2G
ON Semiconductor
39,636
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC Independent Half-Bridge IGBT,N-Channel MOSFET 600V 85ns,35ns 250mA,500mA