- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 65
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
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Infineon Technologies |
1,925
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,795
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 700V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 700V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,261
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 700V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE DRIVER 8TSSOP
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | PG-TSSOP-8 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
3,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8TSSOP
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | PG-TSSOP-8 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
3,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8TSSOP
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | PG-TSSOP-8 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DSO8
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
2,150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DSO8
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
2,150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DSO8
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Surface Mount | Independent | Low-Side | N-Channel MOSFET | - | 6.4ns，5.4ns | 4A，4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC MOSFET IGBT 20V
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 700V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 60mA，130mA |
