- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 249
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
155
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
754
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
440
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR .5A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 500mA,500mA | ||||
Microchip Technology |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
185
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
710
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
394
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
291
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
266
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV TO220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS TO220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
752
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
752
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
20
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR COTS
|
Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
8
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET COTS
|
Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
36
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET COTS
|
Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A |