- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 110
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
2,720
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE 25V 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
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Maxim Integrated |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 6A，6A | ||
|
|
|
Maxim Integrated |
232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
221
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 6A，6A | ||
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|
|
Maxim Integrated |
329
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 6A，6A | ||
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|
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Maxim Integrated |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 0.8V，2.4V | 6A，6A | ||
|
|
|
Infineon Technologies |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DVR LOW SIDE 25V 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tube | - | 11.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tape & Reel (TR) | - | 11.2 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 0.8V，2.5V | 2.3A，3.3A |
