- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 128
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Tape & Reel (TR) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
Cut Tape (CT) | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
15,397
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW SIDE 1.5A SOT23-5
|
- | μHVIC | 10.2 V ~ 20 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 1.5A,1.5A | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 2.3A,3.3A | ||||
Texas Instruments |
3,014
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
329
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A | ||||
Texas Instruments |
3,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
Texas Instruments |
160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
Texas Instruments |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
Infineon Technologies |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8-SOIC
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 2.3A,3.3A | ||||
Maxim Integrated |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 8DIP
|
Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 0.8V,2V | 3A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 0.8V,2.5V | 2.3A,3.3A | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 6A,6A |