- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 249
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
Microchip Technology |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
292
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
556
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
454
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
318
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
83
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
597
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HI-SPEED 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
428
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR .5A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
26
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
56
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 6A，6A | |||
|
|
Microchip Technology |
679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
568
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 0.8V，2V | 1A，1A | |||
|
|
Microchip Technology |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
452
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.5A，1.5A |
