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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 388
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Richtek USA Inc. |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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ON Semiconductor |
Enquête
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-
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MOQ: 4000 MPQ: 1
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HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | 4A，4A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 4000 MPQ: 1
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HIGH PERFORMANCE DUAL MOS
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- | - | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Non-Inverting | Independent | 2 | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | 4A，4A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 2500 MPQ: 1
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HIGH SIDE AND LOW SIDE GA
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Tape & Reel (TR) | Automotive，AEC-Q100 | 8 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 100V | 6ns，4ns | 2V，1.8V | 3A，6A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC MOSFET DVR SYNC BUCK 8DFN
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- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | 1 | N-Channel，P-Channel MOSFET | - | 30ns，27ns | 0.7V，3.4V | 2.5A，1.6A |
