- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Renesas Electronics America Inc. |
4,488
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MONO PIN DVR HS 8-SOIC
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
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Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC MONO PIN DVR HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 485 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 800 MPQ: 1
|
IC PIN DRIVER 10MHZ 8-DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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Tape & Reel (TR) | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | |||
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ON Semiconductor |
2,272
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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Cut Tape (CT) | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | |||
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|
ON Semiconductor |
2,272
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Surface Mount | Independent | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
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- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 10-WDFN Exposed Pad | 10-WDFN (4x4) | Surface Mount | Independent | N-Channel MOSFET | 200V | 8ns，7ns | 0.8V，2.7V |
