- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 42
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
409
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
2,958
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
2,942
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Renesas Electronics America Inc. |
3,142
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Microchip Technology |
839
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER HI/LOSIDE 8-DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
932
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 18000 MPQ: 1
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IC MOSFET DRVR CURR SENSE 8DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC DRIVER 600V 200/420MA 8-DIP
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Tube | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 550 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC DRIVER MOSF DUAL HI/LOW 14DIP
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Tube | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC MONO PIN DVR HS 8DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC PIN DRIVER 40MHZ 3ST 8-DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 800 MPQ: 1
|
IC PIN DRIVER 10MHZ 8-DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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Powerex Inc. |
Enquête
|
- |
-
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MOQ: 21 MPQ: 1
|
IC IGBT GATE DVR ISO 3A
|
Bulk | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Non-Inverting | Single | 1 | IGBT | - | 300ns，300ns | - | 3A，3A | ||
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Microchip Technology |
225
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
|
Tube | 7 V ~ 32 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 2V，4.5V | - | |||
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Microchip Technology |
138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LOW SIDE 8-DIP
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Tube | 4.75 V ~ 32 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 2V，4.5V | - |
