Découvrez les produits 46
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27524DSDT
Texas Instruments
1,088
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27524DSDT
Texas Instruments
1,088
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27528DSDR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27528DSDT
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27528DSDT
Texas Instruments
1,151
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27528DSDT
Texas Instruments
1,151
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27525DSDT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27525DSDT
Texas Instruments
650
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27525DSDT
Texas Instruments
650
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27527DSDT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27527DSDT
Texas Instruments
500
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
UCC27527DSDT
Texas Instruments
500
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
TPS28226DRBT
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC SINK SYNC MOSFET DVR 4A 8SON
Tape & Reel (TR) - 6.8 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
TPS28226DRBT
Texas Instruments
939
3 jours
-
MOQ: 1  MPQ: 1
IC SINK SYNC MOSFET DVR 4A 8SON
Cut Tape (CT) - 6.8 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
TPS28226DRBT
Texas Instruments
939
3 jours
-
MOQ: 1  MPQ: 1
IC SINK SYNC MOSFET DVR 4A 8SON
- - 6.8 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - -
UCC27523DSDT
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27523DSDT
Texas Instruments
979
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27523DSDT
Texas Instruments
979
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
- - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns 1V,2.3V 5A,5A
UCC27527DSDR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LO-SIDE DL 5A 8SON
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 140°C (TJ) 8-WDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side IGBT,N-Channel MOSFET - 7ns,6ns - 5A,5A
TPS28225DRBRG4
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC SYNC MOSFET DVR 4A 8SON
Tape & Reel (TR) - 4.5 V ~ 8.8 V -40°C ~ 125°C (TJ) 8-VDFN Exposed Pad Non-Inverting Synchronous Half-Bridge N-Channel MOSFET 33V 10ns,10ns - 2A,2A