- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 30
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 15ns，10ns | 0.7V，4V | - | ||
|
|
|
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 15ns，10ns | 0.7V，4V | - | ||
|
|
|
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 15ns，10ns | 0.7V，4V | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
2,905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
2,905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | - | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | - | 5A，5A | ||
|
|
|
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | - | 5A，5A | ||
|
|
|
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | - | 5A，5A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A |
