- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 24
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
9,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
6,729
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
6,729
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8SON
|
- | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
- | Automotive，AEC-Q100 | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC SINK SYNC MOSFET DVR 4A 8SON
|
Tape & Reel (TR) | - | 6.8 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
939
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINK SYNC MOSFET DVR 4A 8SON
|
Cut Tape (CT) | - | 6.8 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
939
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINK SYNC MOSFET DVR 4A 8SON
|
- | - | 6.8 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 33V | 10ns，10ns | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A |
