- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 52
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 760 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 760 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
NXP USA Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
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Tape & Reel (TR) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
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Cut Tape (CT) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 114 MPQ: 1
|
IC CCD DRIVER DUAL HS 20-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns (Max) | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC CCD DRIVER DUAL HS 20-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns (Max) | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 114 MPQ: 1
|
IC CCD DRIVER DUAL HS 20-SOIC
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns (Max) | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC CCD DRIVER DUAL HS 20-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns (Max) | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | 4 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | 4 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 152 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | 4 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET QUAD HS 20-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Half-Bridge | 4 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE FET 20SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FULL BRIDGE FET 20SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2160 MPQ: 1
|
IC GATE DRIVER 3HALF BRDG 20SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2160 MPQ: 1
|
IC GATE DVR 3CH HALF BRDG 20-SOP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC PREDRIVER FLEXMOS 20-SOIC
|
Tape & Reel (TR) | FLEXMOS | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 50V | - | 0.8V,2.2V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 216 MPQ: 1
|
IC DVR HI SIDE/DUAL LOW 20-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 20SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,3.5V | 500mA,500mA |