Découvrez les produits 52
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IRS2334STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRIVER
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
HIP4080AIB
Renesas Electronics America Inc.
Enquête
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MOQ: 760  MPQ: 1
IC DRIVER FULL-BRIDGE 20-SOIC
Tube - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 95V 10ns,10ns 1V,2.5V 2.6A,2.4A
HIP4081AIB
Renesas Electronics America Inc.
Enquête
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MOQ: 760  MPQ: 1
IC DRIVER FULL-BRIDGE 20-SOIC
Tube - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 10ns,10ns 1V,2.5V 2.6A,2.4A
MC33883DWR2
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Tape & Reel (TR) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
MC33883DWR2
NXP USA Inc.
Enquête
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MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Cut Tape (CT) - 5.5 V ~ 28 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
EL7243CM
Renesas Electronics America Inc.
Enquête
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MOQ: 114  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CM-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CMZ
Renesas Electronics America Inc.
Enquête
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MOQ: 114  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7243CMZ-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC CCD DRIVER DUAL HS 20-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns (Max) 0.8V,2.4V 2A,2A
EL7412CM
Renesas Electronics America Inc.
Enquête
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MOQ: 152  MPQ: 1
IC DRIVER MOSFET QUAD HS 20-SOIC
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) Inverting Independent Half-Bridge 4 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
EL7412CM-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER MOSFET QUAD HS 20-SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) Inverting Independent Half-Bridge 4 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
EL7412CMZ
Renesas Electronics America Inc.
Enquête
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MOQ: 152  MPQ: 1
IC DRIVER MOSFET QUAD HS 20-SOIC
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) Inverting Independent Half-Bridge 4 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
EL7412CMZ-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER MOSFET QUAD HS 20-SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) Inverting Independent Half-Bridge 4 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
HIP4080AIBT
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE FET 20SOIC
Tape & Reel (TR) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 95V 10ns,10ns 1V,2.5V 2.6A,2.4A
HIP4081AIBT
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER FULL BRIDGE FET 20SOIC
Tape & Reel (TR) - 9.5 V ~ 15 V -40°C ~ 125°C (TJ) Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 10ns,10ns 1V,2.5V 2.6A,2.4A
FAN7388M
ON Semiconductor
Enquête
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MOQ: 2160  MPQ: 1
IC GATE DRIVER 3HALF BRDG 20SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7888M
ON Semiconductor
Enquête
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MOQ: 2160  MPQ: 1
IC GATE DVR 3CH HALF BRDG 20-SOP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 200V 50ns,30ns 1V,2.5V 350mA,650mA
NCV7510DWR2G
ON Semiconductor
Enquête
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MOQ: 1000  MPQ: 1
IC PREDRIVER FLEXMOS 20-SOIC
Tape & Reel (TR) FLEXMOS 4.75 V ~ 5.25 V -40°C ~ 125°C (TJ) Non-Inverting Single High-Side 1 N-Channel MOSFET 50V - 0.8V,2.2V -
IRS21956SPBF
Infineon Technologies
Enquête
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MOQ: 216  MPQ: 1
IC DVR HI SIDE/DUAL LOW 20-SOIC
Tube - 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,3.5V 500mA,500mA
IRS21956STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DVR HI/LOW SIDE 600V 20SOIC
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,3.5V 500mA,500mA