- Packaging：
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- Series：
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- Operating Temperature：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 9
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2880 MPQ: 1
|
IC MOSFET DRIVER
|
Tube | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2160 MPQ: 1
|
IC GATE DRIVER 3HALF BRDG 20SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel MOSFET | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 216 MPQ: 1
|
IC DVR HI SIDE/DUAL LOW 20-SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT，N-Channel MOSFET | 25ns，15ns | 0.8V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 20SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT，N-Channel MOSFET | 25ns，15ns | 0.8V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 252 MPQ: 1
|
IC DRVR IGBT/MOSFET 20SOIC
|
Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 3-Phase | 6 | IGBT，N-Channel，P-Channel MOSFET | 125ns，50ns | 0.8V，2.5V | 200mA，350mA |
