Découvrez les produits 21
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
FAN7888MX
ON Semiconductor
5,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
Tape & Reel (TR) - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 200V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7888MX
ON Semiconductor
6,038
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
Cut Tape (CT) - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 200V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7888MX
ON Semiconductor
6,038
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
- - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 200V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7388MX
ON Semiconductor
24,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
Tape & Reel (TR) - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7388MX
ON Semiconductor
24,216
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
Cut Tape (CT) - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7388MX
ON Semiconductor
24,216
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDG 20SOIC
- - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 1V,2.5V 350mA,650mA
MC33883HEGR2
NXP USA Inc.
10,000
3 jours
-
MOQ: 1000  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
Tape & Reel (TR) - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
MC33883HEGR2
NXP USA Inc.
11,423
3 jours
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
Cut Tape (CT) - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
MC33883HEGR2
NXP USA Inc.
11,423
3 jours
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20SOIC
- - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
IRS2334SPBF
Infineon Technologies
Enquête
-
-
MOQ: 2880  MPQ: 1
IC MOSFET DRIVER
Tube - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2334STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER
Tape & Reel (TR) - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
MC33883DWR2
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Tape & Reel (TR) - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
MC33883DWR2
NXP USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Cut Tape (CT) - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
FAN7388M
ON Semiconductor
Enquête
-
-
MOQ: 2160  MPQ: 1
IC GATE DRIVER 3HALF BRDG 20SOIC
Tube - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 50ns,30ns 1V,2.5V 350mA,650mA
FAN7888M
ON Semiconductor
Enquête
-
-
MOQ: 2160  MPQ: 1
IC GATE DVR 3CH HALF BRDG 20-SOP
Tube - 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 200V 50ns,30ns 1V,2.5V 350mA,650mA
AUIRS2334S
Infineon Technologies
Enquête
-
-
MOQ: 252  MPQ: 1
IC DRVR IGBT/MOSFET 20SOIC
Tube Automotive,AEC-Q100 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
MC33883DW
NXP USA Inc.
Enquête
-
-
MOQ: 38  MPQ: 1
IC H-BRIDGE PRE-DRIVER 20-SOIC
Tube - 5.5 V ~ 28 V Independent Half-Bridge 4 N-Channel MOSFET 55V 80ns,80ns 0.8V,2V 1A,1A
MCZ33883EGR2
NXP USA Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC PRE-DRIVER FULL BRIDGE 20SOIC
Tape & Reel (TR) - 5.5 V ~ 55 V Independent Half-Bridge 4 N-Channel MOSFET - - 0.8V,2V 1A,1A
MCZ33883EG
NXP USA Inc.
Enquête
-
-
MOQ: 38  MPQ: 1
IC PRE-DRIVER FULL BRIDGE 20SOIC
Tube - 5.5 V ~ 55 V Independent Half-Bridge 4 N-Channel MOSFET - - 0.8V,2V 1A,1A
LT1161ISW#PBF
Linear Technology/Analog Devices
7,154
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER N-CH QUAD20SOIC
Tube - 8 V ~ 48 V Independent High-Side 4 N-Channel MOSFET - - 0.8V,2V -