- Packaging:
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- Series:
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- Voltage - Supply:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 21
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
NXP USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
- | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2880 MPQ: 1
|
IC MOSFET DRIVER
|
Tube | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2160 MPQ: 1
|
IC GATE DRIVER 3HALF BRDG 20SOIC
|
Tube | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2160 MPQ: 1
|
IC GATE DVR 3CH HALF BRDG 20-SOP
|
Tube | - | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 252 MPQ: 1
|
IC DRVR IGBT/MOSFET 20SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 38 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20-SOIC
|
Tube | - | 5.5 V ~ 28 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns,80ns | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PRE-DRIVER FULL BRIDGE 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 55 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | 0.8V,2V | 1A,1A | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 38 MPQ: 1
|
IC PRE-DRIVER FULL BRIDGE 20SOIC
|
Tube | - | 5.5 V ~ 55 V | Independent | Half-Bridge | 4 | N-Channel MOSFET | - | - | 0.8V,2V | 1A,1A | ||||
Linear Technology/Analog Devices |
7,154
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH QUAD20SOIC
|
Tube | - | 8 V ~ 48 V | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V,2V | - |