- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 52
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
6,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 200V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
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Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
|
|
|
Renesas Electronics America Inc. |
2,362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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NXP USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Tape & Reel (TR) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
Cut Tape (CT) | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
NXP USA Inc. |
11,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC H-BRIDGE PRE-DRIVER 20SOIC
|
- | - | 5.5 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 55V | 80ns，80ns | 0.8V，2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
374
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC FET DRVR 60V/2.5A HF 20-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2880 MPQ: 1
|
IC MOSFET DRIVER
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA |
