- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 157
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC MOSFET DRIVER SGL 10DFN
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Tube | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER SGL 10DFN
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Tape & Reel (TR) | 4.5 V ~ 7.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 30V | 5.3ns，4.8ns | 1.7V，3.4V | 3.2A，3.2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
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IC MOSFET DRIVER N-CH 10DFN
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Tape & Reel (TR) | 6.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 13ns，10ns | - | 2.5A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER N-CH 10DFN
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Tube | 6.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 13ns，10ns | - | 2.5A，4A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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IC BUCK SYNC DRIVER DL TDSON10-2
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Tape & Reel (TR) | 4.5 V ~ 6 V | -25°C ~ 150°C (TJ) | TDSON-10-2 | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 10ns，10ns | 1.3V，1.9V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HI/LOW SIDE 10DFN
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- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Monolithic Power Systems Inc. |
2,000
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3 jours |
-
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MOQ: 500 MPQ: 1
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IC GATE DRIVER
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Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | |||
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Monolithic Power Systems Inc. |
2,282
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER
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Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | |||
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Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DRIVER HI/LO 600V 10DFN
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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ON Semiconductor |
2,882
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO 600V 10DFN
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Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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ON Semiconductor |
2,882
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
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- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
SYNCH RECT BUCK MOSFET
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Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 10-DFN (3x3) | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 1.3V，1.9V | -，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
SYNCH RECT BUCK MOSFET
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 10-DFN (3x3) | - | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | 1.3V，1.9V | -，4A | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A |
