Fabricant:
Supplier Device Package:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Supplier Device Package Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MP1907GQ-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
MP1907GQ-P
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
ZL1505ALNNT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DRIVER SGL 10DFN
Tube 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNNT1
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER SGL 10DFN
Tape & Reel (TR) 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
MP1907AGQ-P
Monolithic Power Systems Inc.
2,000
3 jours
-
MOQ: 500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
MP1907AGQ-P
Monolithic Power Systems Inc.
2,282
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
Cut Tape (CT) 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
MP1907AGQ-P
Monolithic Power Systems Inc.
2,282
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
- 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
NCP5109AMNTWG
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Tape & Reel (TR) 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109AMNTWG
ON Semiconductor
2,882
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Cut Tape (CT) 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109AMNTWG
ON Semiconductor
2,882
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
- 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
MP1907AGQ-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) 4.5 V ~ 18 V 10-QFN (3x3) N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
ZL1505ALNFT6
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNFT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNFT1
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNNT6
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) 4.5 V ~ 7.5 V 10-DFN (3x3) N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
NCP5109BMNTWG
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Tape & Reel (TR) 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109BMNTWG
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Cut Tape (CT) 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109BMNTWG
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
- 10 V ~ 20 V 10-DFN (3x3) IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA