- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 13
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
5,859
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 21ns，18ns | 0.8V，1V | 3A，4A | ||
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|
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Monolithic Power Systems Inc. |
4,687
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
- | - | 10-QFN (3x3) | - | - | - | - | - | - | - | - | - | ||
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|
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Renesas Electronics America Inc. |
10,503
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SYNC BUCK 10DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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|
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Renesas Electronics America Inc. |
15,806
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
6.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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|
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Infineon Technologies |
2,700
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRIVER 10DFN
|
4.5 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | 3A，4A | ||
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 10DFN
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5 V ~ 12 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 41V | - | 0.8V，2V | 2A，- | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 10-DFN
|
10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
|
4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 10ns，8ns | 0.8V，1V | 2A，2A | ||
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Monolithic Power Systems Inc. |
2,282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER
|
4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 10-QFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | |||
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ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
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10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
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Microchip Technology |
2,615
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI VOLT 400V 10
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3.15 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-DFN (3x4) | Non-Inverting | Synchronous | High-Side | 2 | N-Channel MOSFET | 400V | 650μs，3ms (Max) | 0.5V，3.15V | - |
