- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 47
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 125°C | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR HI/LOW SIDE 10DFN
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Tape & Reel (TR) | - | 5 V ~ 14 V | -40°C ~ 125°C (TA) | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A |
