Fabricant:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 13
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Supplier Device Package Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX8552ETB+
Maxim Integrated
1,900
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HS 10-TDFN
Strip - 4.5 V ~ 6.5 V 10-TDFN (3x3) Synchronous Half-Bridge N-Channel MOSFET - 14ns,9ns 0.8V,2.5V -
DGD0503FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV 10-WDFN
Tape & Reel (TR) - 10 V ~ 20 V W-DFN3030-10 Independent Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0503FN-7
Diodes Incorporated
2,647
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
Cut Tape (CT) - 10 V ~ 20 V W-DFN3030-10 Independent Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0503FN-7
Diodes Incorporated
2,647
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
- - 10 V ~ 20 V W-DFN3030-10 Independent Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
MAX15025AATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 28 V 10-TDFN (3x3) Independent Low-Side N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
MAX15025AATB+T
Maxim Integrated
678
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 28 V 10-TDFN (3x3) Independent Low-Side N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
MAX15025AATB+T
Maxim Integrated
678
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- Automotive,AEC-Q100 4.5 V ~ 28 V 10-TDFN (3x3) Independent Low-Side N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
DGD0504FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV 10-WDFN
Tape & Reel (TR) - 10 V ~ 20 V W-DFN3030-10 Synchronous Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0504FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
Cut Tape (CT) - 10 V ~ 20 V W-DFN3030-10 Synchronous Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD0504FN-7
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HV 10-WDFN
- - 10 V ~ 20 V W-DFN3030-10 Synchronous Half-Bridge IGBT,N-Channel MOSFET 100V 70ns,35ns 0.8V,2.5V 290mA,600mA
MAX8552ETB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HS 10-TDFN
Tape & Reel (TR) - 4.5 V ~ 6.5 V 10-TDFN (3x3) Synchronous Half-Bridge N-Channel MOSFET - 14ns,9ns 0.8V,2.5V -
MAX8552ETB+T
Maxim Integrated
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HS 10-TDFN
Cut Tape (CT) - 4.5 V ~ 6.5 V 10-TDFN-EP (3x3) Synchronous Half-Bridge N-Channel MOSFET - 14ns,9ns 0.8V,2.5V -
MAX8552ETB+T
Maxim Integrated
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HS 10-TDFN
- - 4.5 V ~ 6.5 V 10-TDFN-EP (3x3) Synchronous Half-Bridge N-Channel MOSFET - 14ns,9ns 0.8V,2.5V -