- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 24
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
3,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
|
|
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
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- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2.5A | ||
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|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 0.8V，2.4V | 1.5A，2A | ||
|
|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 22ns，16ns | 0.8V，2V | 4A，8A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，13ns | 1V，2.5V | 1.5A，2.5A | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | W-DFN3030-10 | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET HS 10-TDFN
|
- | 4.5 V ~ 6.5 V | -40°C ~ 150°C (TJ) | 10-TDFN (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 14ns，9ns | 0.8V，2.5V | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8A SGL 10TDFN
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 22ns，16ns | 0.8V，2V | 4A，8A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
- | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 24ns，16ns | - | 4A，8A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
- | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 24ns，16ns | - | 4A，8A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 24ns，16ns | 2V，4.25V | 4A，8A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive，AEC-Q100 | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | 2V，4.25V | 2A，4A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | 6.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 48ns，32ns | - | 2A，4A |
