- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 154
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-SOT23-6-2 | Inverting,Non-Inverting | Single | Half-Bridge,Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 6.5ns,4.5ns | 1.2V,1.9V | 4A,8A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Infineon Technologies |
2,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel,P-Channel MOSFET | 84V | 6.5ns,4.5ns | - | 4A,8A | ||||
Texas Instruments |
750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,2.2V | 2.5A,5A | ||||
Texas Instruments |
914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,2.2V | 2.5A,5A | ||||
Texas Instruments |
914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,2.2V | 2.5A,5A | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,1.7V | 2.5A,5A | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,1.7V | 2.5A,5A | ||||
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | - | 15ns,7ns | 1.2V,1.7V | 2.5A,5A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 25V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 1A LOW SIDE SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns (Max) | - | 800mA,1A | ||||
STMicroelectronics |
72
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 1A LOW SIDE SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns (Max) | - | 800mA,1A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 1A LOW SIDE SOT23-6
|
- | - | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns (Max) | - | 800mA,1A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 0.8V,2.4V | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | - | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | - | 4.5A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 0.8V,2.4V | 4.5A,7.6A |