Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 154
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8550BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6 Non-Inverting Single High-Side 1 N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns - 4A,8A
1EDN8550BXTSA1
Infineon Technologies
2,980
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6 Non-Inverting Single High-Side 1 N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns - 4A,8A
1EDN8550BXTSA1
Infineon Technologies
2,980
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6 Non-Inverting Single High-Side 1 N-Channel,P-Channel MOSFET 84V 6.5ns,4.5ns - 4A,8A
UCC27538DBVT
Texas Instruments
750
3 jours
-
MOQ: 250  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27538DBVT
Texas Instruments
914
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27538DBVT
Texas Instruments
914
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27532DBVT
Texas Instruments
500
3 jours
-
MOQ: 250  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532DBVT
Texas Instruments
500
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532DBVT
Texas Instruments
500
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
ZXGD3005E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR IGBT/MOSFET SOT26
Tape & Reel (TR) Automotive,AEC-Q101 25V (Max) -55°C ~ 150°C (TJ) SOT-26 Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 48ns,35ns - 10A,10A
ZXGD3005E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR IGBT/MOSFET SOT26
Cut Tape (CT) Automotive,AEC-Q101 25V (Max) -55°C ~ 150°C (TJ) SOT-26 Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 48ns,35ns - 10A,10A
ZXGD3005E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR IGBT/MOSFET SOT26
- Automotive,AEC-Q101 25V (Max) -55°C ~ 150°C (TJ) SOT-26 Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 48ns,35ns - 10A,10A
PM8851D
STMicroelectronics
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR 1A LOW SIDE SOT23-6
Tape & Reel (TR) - 10 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 20ns,20ns (Max) - 800mA,1A
PM8851D
STMicroelectronics
72
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 1A LOW SIDE SOT23-6
Cut Tape (CT) - 10 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 20ns,20ns (Max) - 800mA,1A
PM8851D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 1A LOW SIDE SOT23-6
- - 10 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 20ns,20ns (Max) - 800mA,1A
LM5114BMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET GATE DVR 7.6A SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
LM5114AMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns - 1.3A,7.6A
LM5134AMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 3ns,2ns - 4.5A,7.6A
LM5134BMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 3ns,2ns 0.8V,2.4V 4.5A,7.6A