- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 149
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | - | 10A，10A | ||
|
|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
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|
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Texas Instruments |
57,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A |
