Fabricant:
Voltage - Supply:
Supplier Device Package:
Channel Type:
Driven Configuration:
Number of Drivers:
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LTC1982ES6#TRMPBF
Linear Technology/Analog Devices
9,000
3 jours
-
MOQ: 500  MPQ: 1
IC CTRLR SW HI-SIDE SGL SOT23-6
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C (TA) SOT-23-6 Independent High-Side 2 N-Channel MOSFET - 0.6V,1.4V -
LTC1982ES6#TRMPBF
Linear Technology/Analog Devices
9,285
3 jours
-
MOQ: 1  MPQ: 1
IC CTRLR SW HI-SIDE SGL SOT23-6
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C (TA) SOT-23-6 Independent High-Side 2 N-Channel MOSFET - 0.6V,1.4V -
LTC1982ES6#TRMPBF
Linear Technology/Analog Devices
9,285
3 jours
-
MOQ: 1  MPQ: 1
IC CTRLR SW HI-SIDE SGL SOT23-6
- 1.8 V ~ 5.5 V -40°C ~ 85°C (TA) SOT-23-6 Independent High-Side 2 N-Channel MOSFET - 0.6V,1.4V -
MCP14A0151T-E/CH
Microchip Technology
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 1.5A SINGLE SOT-23
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 11.5ns,10ns 0.8V,2V 1.5A,1.5A
MCP14A0151T-E/CH
Microchip Technology
1,986
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A SINGLE SOT-23
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 11.5ns,10ns 0.8V,2V 1.5A,1.5A
MCP14A0151T-E/CH
Microchip Technology
1,986
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 1.5A SINGLE SOT-23
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23-6 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 11.5ns,10ns 0.8V,2V 1.5A,1.5A
MCP14A0051T-E/CH
Microchip Technology
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DVR 0.5A SINGLE SOT-23
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 40ns,28ns 0.8V,2V 500mA,500mA
MCP14A0051T-E/CH
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 0.5A SINGLE SOT-23
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 40ns,28ns 0.8V,2V 500mA,500mA
MCP14A0051T-E/CH
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 0.5A SINGLE SOT-23
- 4.5 V ~ 18 V -40°C ~ 150°C (TJ) SOT-23 Single High-Side or Low-Side 1 N-Channel,P-Channel MOSFET 40ns,28ns 0.8V,2V 500mA,500mA
LTC1982ES6#TRPBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 2500  MPQ: 1
IC CTRLR SW HI-SIDE DUAL SOT23-6
Tape & Reel (TR) 1.8 V ~ 5.5 V -40°C ~ 85°C (TA) SOT-23-6 Independent High-Side 2 N-Channel MOSFET - 0.6V,1.4V -
LTC1982ES6#TRM
Linear Technology/Analog Devices
3
3 jours
-
MOQ: 1  MPQ: 1
IC CTRLR SW HI-SIDE DUAL SOT23-6
Cut Tape (CT) 1.8 V ~ 5.5 V -40°C ~ 85°C (TA) SOT-23-6 Independent High-Side 2 N-Channel MOSFET - 0.6V,1.4V -