Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 154
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27532DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532DBVR
Texas Instruments
5,719
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532DBVR
Texas Instruments
5,719
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27538DBVR
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27538DBVR
Texas Instruments
2,611
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27538DBVR
Texas Instruments
2,611
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC27532QDBVRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532QDBVRQ1
Texas Instruments
3,139
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
UCC27532QDBVRQ1
Texas Instruments
3,139
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT GATE DRIVER SOT-23-6
- Automotive,AEC-Q100 10 V ~ 32 V -40°C ~ 140°C (TJ) SOT-23-6 Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,1.7V 2.5A,5A
MAX5048BAUT+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR HIGH SPEED SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
MAX5048BAUT+T
Maxim Integrated
1,690
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HIGH SPEED SOT23-6
Cut Tape (CT) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
MAX5048BAUT+T
Maxim Integrated
1,690
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HIGH SPEED SOT23-6
- - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
IRS20752LTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRIVER 1CH 200V SOT23
Tape & Reel (TR) μHVIC 10 V ~ 18 V -40°C ~ 125°C (TJ) SOT-23-6 Non-Inverting Single High-Side 1 N-Channel MOSFET 200V 85ns,40ns 0.8V,2.2V 160mA,240mA
IRS20752LTRPBF
Infineon Technologies
2,505
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 200V SOT23
Cut Tape (CT) μHVIC 10 V ~ 18 V -40°C ~ 125°C (TJ) SOT-23-6 Non-Inverting Single High-Side 1 N-Channel MOSFET 200V 85ns,40ns 0.8V,2.2V 160mA,240mA
IRS20752LTRPBF
Infineon Technologies
2,505
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 200V SOT23
- μHVIC 10 V ~ 18 V -40°C ~ 125°C (TJ) SOT-23-6 Non-Inverting Single High-Side 1 N-Channel MOSFET 200V 85ns,40ns 0.8V,2.2V 160mA,240mA
1EDN8511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) EiceDriver 8 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) EiceDriver 8 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN8511BXUSA1
Infineon Technologies
2,696
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
- EiceDriver 8 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
DRIVER IC
Tape & Reel (TR) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A
1EDN7511BXUSA1
Infineon Technologies
2,449
3 jours
-
MOQ: 1  MPQ: 1
DRIVER IC
Cut Tape (CT) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) PG-SOT23-6-2 Inverting,Non-Inverting Single Half-Bridge,Low-Side 1 N-Channel,P-Channel MOSFET - 6.5ns,4.5ns 1.2V,1.9V 4A,8A