- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 154
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
1,531
|
3 jours |
-
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MOQ: 1 MPQ: 1
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SYNCH MOSFET CONTROLLER,SOT23
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- | - | 3.5 V ~ 40 V | -40°C ~ 150°C (TJ) | SOT-23-6 | - | Synchronous | Low-Side | 1 | N-Channel MOSFET | - | 360ns，210ns | - | 1.5A，3A | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT23-6
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Tape & Reel (TR) | - | 12V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | - | 9A，9A | ||
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Diodes Incorporated |
1,932
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 12V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | - | 9A，9A | ||
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Diodes Incorporated |
1,932
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 12V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | - | 9A，9A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
SINGLE DRIVER
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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Texas Instruments |
2,581
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
2,581
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
500
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
SINGLE DRIVER
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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Texas Instruments |
1,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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Texas Instruments |
1,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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Texas Instruments |
2,952
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
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- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns，2ns | - | 4.5A，7.6A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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|
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Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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|
|
Texas Instruments |
1,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
|
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A |
