- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 154
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
6,964
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET GATE DVR 7.6A SOT23-6
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- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
9,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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Texas Instruments |
11,022
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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|
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Texas Instruments |
11,022
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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Texas Instruments |
4,500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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Texas Instruments |
7,000
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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|
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Texas Instruments |
7,423
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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|
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Texas Instruments |
7,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
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Diodes Incorporated |
27,000
|
3 jours |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
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|
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Diodes Incorporated |
28,160
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
|
|
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Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive，AEC-Q101 | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-26 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
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|
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Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
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Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
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|
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Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
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|
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Infineon Technologies |
4,783
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
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|
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Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
- | μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 600V | 85ns，40ns | - | 160mA，240mA |
